Solecon Laboratories, Inc.
Solecon Laboratories provides front-end process engineers / scientist with timely and cost effective characterization of resistivity and concentration vs. depth measurements in silicon and germanium with resolutions down to the nanometer range.
Solecon Laboratories provides front-end process engineers / scientist with timely and cost effective characterization of resistivity and concentration vs. depth measurements in silicon and germanium with resolutions down to the nanometer range. Spreading resistance analysis (SRA) is especially useful for its depth accuracy (+/-3%) and sensitivity to ultra-low dopant concentrations. SRA can be performed at any stage of the wafer fab process, and is used extensively for: Epitaxial deposition - thickness, resistivity, and auto doping issues, ion implant verification, dopant contamination, diffusions in general - deep or shallow. We will be happy to discuss the possibility of running complimentary analyses to demonstrate our capabilities on your samples. Please contact Sheila Loftis at 775-853-5900 or sheila@solecon.com